cystech electronics corp. spec. no. : c858k3 issued date : 2014.11.24 revised date : page no. : 1/8 btc2328ak3 cystek product specification npn epitaxial planar transistor btc2328ak3 features ? low saturation voltage, v ce(sat) =0.5v(max)@i c =1.5a, i b =30ma ? complementary to bta928ak3 ? pb-free lead plating and halogen-free package symbol outline ordering information device package shipping BTC2328AK3-0-TB-G to-92l (pb-free lead plating and halogen-free package) 2000 pcs / tape & box btc2328ak3-0-bm-g to-92l (pb-free lead plating and halogen-free package) 500 pcs / bag, 10 bags/box, 10 boxes/carton btc2328ak3 to-92l b base c collector e emitter bv ceo 30v i c 2a r cesat(max) 333m environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, tb : 2000 pcs / tape & box ; bm : 500 pcs/bag, 10 bags/box, 10 boxes/carton product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c858k3 issued date : 2014.11.24 revised date : page no. : 2/8 btc2328ak3 cystek product specification absolute maximum ratings (ta=25 c) parameter symbol limits unit collector-base voltage v cbo 80 collector-emitter voltage v ceo 30 emitter-base voltage v ebo 6 v collector current(dc) i c 2 collector current(pulsed) (note 1) i cp 5 base current i b 0.5 a power dissipation p d 1 w thermal resistance, junction to ambient r ja 125 c/w operating junction temperature and storage range tj ; tstg -55~+150 c note 1: single pulse, pw 300 s, duty cycle 2%. characteristics (ta=25 c) symbol min. typ. max. unit test conditions bv cbo 80 - - v i c =100 a bv ceo 30 - - v i c =10ma bv ebo 6 - - v i e =100 a i cbo - - 100 na v cb =80v i ebo - - 100 na v eb =6v v ce(sat) * - - 500 mv i c =1.5a, i b =30ma r ce(sat) * - - 333 m i c =1.5a, i b =30ma v be(sat) * - - 1.2 v i c =1.5a, i b =30ma v be(on) * - - 1 v v ce =2v, i c =500ma h fe * 160 - 320 - v ce =2v, i c =500ma f t 120 270 - mhz v ce =5v, i c =500ma cob - 16.5 30 pf v cb =10v, i e =0a,f=1mhz *pulse test: pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c858k3 issued date : 2014.11.24 revised date : page no. : 3/8 btc2328ak3 cystek product specification typical characteristics emitter grounded output characteristics 0 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 200ua 300ua 400ua 500ua 1ma ib=100ua emitter grounded output characteristics 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) 1ma 1.5ma 2ma 2.5ma 5ma ib=500ua emitter grounded output characteristics 0 1 2 3 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=2ma 4ma 6ma 10m a 20m a emitter grounded output characteristics 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 0123456 collector-to-emitter voltage---vce(v) collector current---ic(a) ib=5ma 10ma 20ma 50 m a current gain vs collector current 10 100 1000 10 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=1v current gain vs collector current 10 100 1000 10 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=2v
cystech electronics corp. spec. no. : c858k3 issued date : 2014.11.24 revised date : page no. : 4/8 btc2328ak3 cystek product specification typical characteristics(cont.) current gain vs collector current 100 1000 10 100 1000 10000 collector current---ic(ma) current gain---hfe 75 25 125 vce=5v saturation voltage vs collector current 1 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat=10ib 25 75c 125c saturation voltage vs collector current 10 100 1000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat=50ib 25 75c 125c saturation voltage vs collector current 10 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) vcesat=100ib 25 75c 125c saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125 vbesat=50ib 75 25 saturation voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) saturation voltage---(mv) 125 vbesat=100ib 75 25
cystech electronics corp. spec. no. : c858k3 issued date : 2014.11.24 revised date : page no. : 5/8 btc2328ak3 cystek product specification typical characteristics(cont.) on voltage vs collector current 100 1000 10000 1 10 100 1000 10000 collector current---ic(ma) on voltage---(mv) 125 vce=2v 75 25 capacitance vs reverse-biased voltage 10 100 1000 0.1 1 10 100 reverse-biased voltage---(v) capacitance---(pf) cib cob power derating curve 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 ambient temperature---ta() power dissipation---pd(w) cutoff frequency vs collector current 10 100 1000 1 10 100 1000 collector current --- ic(ma) cutoff frequency---ft(mhz) vce=5v
cystech electronics corp. spec. no. : c858k3 issued date : 2014.11.24 revised date : page no. : 6/8 btc2328ak3 cystek product specification to-92l taping outline millimeters dim item min. max. a1 component body width 4.70 5.10 a component body height 7.80 8.20 t component body thickness 3.70 4.10 d lead wire diameter 0.35 0.55 d1 lead wire diameter 1 0.60 0.80 p pitch of component 12.40 13.00 p0 feed hole pitch 12.50 12.90 p2 hole center to component center 6.05 6.65 f1, f2 lead to lead distance 2.20 2.80 h component alignment, f-r -1.00 1.00 w tape width 17.50 19.00 w0 hole down tape width 5.50 6.50 w1 hole position 8.50 9.50 w2 hole down tape position - 1.00 h height of component from tape center 19.00 21.00 h0 lead wire clinch height 15.50 16.50 l1 lead wire (tape portion) 2.50 - d0 feed hole diameter 3.80 4.20 t1 taped lead thickness 0.35 0.45 t2 carrier tape thickness 0.15 0.25 p1 position of hole 3.55 4.15 p component alignment -1.00 1.00
cystech electronics corp. spec. no. : c858k3 issued date : 2014.11.24 revised date : page no. : 7/8 btc2328ak3 cystek product specification recommended wave soldering condition soldering time product peak temperature pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds 183 c 60-150 seconds time maintained above: ? temperature (t l ) 217 c ? time (t l ) 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak 10-30 seconds 20-40 seconds temperature(tp) ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c858k3 issued date : 2014.11.24 revised date : page no. : 8/8 btc2328ak3 cystek product specification to-92l dimension *: typical inches c2328a marking: s t yle: pin 1.emitter 2.collector 3.base 3-lead t o -92l plastic package cy s t ek p a cka g e code: k3 product nam e date code: y ear+month y ear: 7 2007, 8 2008 9 9, a 10, b 11 , c 12 month: 1 1, 2 2, ??? , m i l l i m e t e r s i n c h e s m i l l i m e t e r s dim m i n . m a x . m i n . m a x . dim m i n . m a x . m i n . m a x . a 0 . 1 4 6 0 . 1 6 1 3 . 7 0 0 4 . 1 0 0 e 0 . 3 0 7 0 . 3 2 3 7 . 8 0 0 8 . 2 0 0 a 1 0 . 0 5 0 0 . 0 6 2 1 . 2 8 0 1 . 5 8 0 e * 0 . 0 5 * 1 . 2 7 0 b 0 . 0 1 4 0 . 0 2 2 0 . 3 5 0 0 . 5 5 0 e 1 0 . 0 9 6 0 . 1 0 4 2 . 4 4 0 2 . 6 4 0 b 1 0 . 0 2 4 0 . 0 3 1 0 . 6 0 0 0 . 8 0 0 l 0 . 5 4 3 0 . 5 5 9 1 3 . 8 0 0 1 4 . 2 0 0 c 0 . 0 1 4 0 . 0 1 8 0 . 3 5 0 0 . 4 5 0 ? - 0 . 0 6 3 - 1 . 6 0 0 d 0 . 1 8 5 0 . 2 0 1 4 . 7 0 0 5 . 1 0 0 h 0 . 0 0 0 0 . 0 1 2 0 . 0 0 0 0 . 3 0 0 d 1 0 . 1 5 7 - 4 . 0 0 0 - notes: 1.contr o lling dimension: millimeter s. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question w i th p a cking spec ification or p a cking method, please cont act y our local cy s t ek sales of fice. material: ? lead: pure tin plated. ? mold compound: epox y resin family , flammability solid burning class: ul94v -0. important notice: ? all rights are reserved. reproduction in w hole or in part is prohibited w i thout the prior w r itten approval of cy stek. ? cy stek reserves the right to make changes to its products w i thout notice. ? cy stek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cy stek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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